SEMICONDUCTOR WAFER AND ITS MANUFACTURING METHOD

摘要

A semiconductor not involving the problem of lattice mismatching between the material of the substrate and the material epitaxially grown and its manufacturing method are provided. A semiconductor in which a 3C-SiC layer is epitaxially formed on an Si substrate with a c-BP cubic boron phosphide buffer layer interposed therebetween, a wafer in which a monocrystalline GaN film is formed on a silicon substrate with a c-BP buffer layer interposed therebetween, and a semiconductor manufacturing method in which c-BP is interposed as a buffer layer between an Si wafer and a 3C-SiC layer when the 3C-SiC layer is epitaxially formed on the Si wafer to serve as a substrate are disclosed. According to the invention, an SiC or GaN semiconductor in which the misfit dislocation due to the lattice constant difference is suppressed and which has performance excellent as a semiconductor function and a high quality can be produced.