| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which plasma damage and the variation of wiring resistance occurring when forming sealing structure are reduced, and to provide a method for manufacturing the semiconductor device. SOLUTION: After depositing a layer insulation film 18 on a substrate provided with an element, wires 52 and 56 of a lower layer, the layer insulation film 18 has a via hole 70 reaching the wire 56 formed in an internal element area and an annular groove 30 reaching an annular pad 16 formed in the outer periphery part of a chip region. Next, by etching a photoresist pattern Fr2 formed on the layer insulation film 18 as a mask, a wiring groove 71 larger than the via hole 70 is formed in the internal element region. Since a portion positioned at the edge part of the outer peripheral part of a chip region in the annular groove 30 is filled with a part of the photoresist pattern Fr2, Cu, etc., spattering from the bottom surface of the annular groove 30 is reduced. |
