| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the reliability of a magnetic memory device while suppressing its power consumption low. SOLUTION: A wiring groove is formed by removing part of a 2nd interlayer insulating film 11, and a 2nd metal wire 19 is formed as a write line in the wiring groove. The top surfaces of the 2nd inter-layer insulating film 11 and 2nd metal wire 19 are polished and flattened, and a material containing alumina is deposited on the 2nd inter-layer insulating film 11 and 2nd metal wire 19 to form a 3rd inter-layer insulating film 12 of <=200 nm in thickness. On the 3rd inter-layer insulating film 12, a TMR element 18 is formed and partially etched. The interval between a lower magnetic layer 15 of the TMR element 18 and the 2nd metal wire 19 is <=200 nm.</p> |
