发明名称 |
PHOTODIODE ARRAY, SOLID IMAGE PICKUP UNIT AND RADIATION DETECTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a photodiode array capable of satisfactorily reducing the generation of any cross-talk even at the time of collecting electrodes or wiring at one face side. SOLUTION: In a photodiode array 1, a plurality of p type semiconductor layers 3 are arranged on a surface 2s of an n- type semiconductor substrate 2, and light to be detected is made incident from a back face 2u side of the semiconductor substrate 2. A plurality of n+ type channel stopper layers 2 are arranged at the surface 2s side of the semiconductor substrate 2 so as to be positioned in the neighborhood of each p type semiconductor layer 3. Also, a trench part 10 extended from the corresponding channel stopper layer 4 to the back face 2u is arranged at the surface 2s side of the semiconductor substrate 2 so that each p type semiconductor layer 3 and the periphery of the channel stopper layer 4 in the neighborhood can be completely surrounded.
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申请公布号 |
JP2003086827(A) |
申请公布日期 |
2003.03.20 |
申请号 |
JP20010277136 |
申请日期 |
2001.09.12 |
申请人 |
HAMAMATSU PHOTONICS KK |
发明人 |
OKAMOTO KOJI;SAKAMOTO AKIRA;FUJII YOSHIMAROU |
分类号 |
G01T1/20;H01L27/14;H01L27/146;H01L31/09;H01L31/10;H04N5/32;(IPC1-7):H01L31/10 |
主分类号 |
G01T1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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