Method of forming a low resistance multi-layered TiN film with superior barrier property using poison mode cycling

摘要

A new method of forming a robust titanium nitride barrier layer by PVD is described. Semiconductor device structures are provided in and on a semiconductor substrate. The semiconductor device structures are covered with an insulating layer. A via is opened through the insulating layer to one of the underlying semiconductor device structures. A titanium nitride barrier layer having a discontinuous grain structure is deposited within the via wherein the titanium nitride barrier layer comprises alternating layers of titanium nitride and titanium containing a trace of nitrogen. A metal layer is deposited overlying the titanium nitride barrier layer wherein the discontinuous grain structure of the titanium nitride barrier layer prevents diffusion from the metal layer into the insulating layer to complete formation of a robust titanium nitride barrier layer in the fabrication of an integrated circuit device.