| 摘要 |
PROBLEM TO BE SOLVED: To provide manufacturing processes of MOCVD, annealing, etc., for a ferroelectric thin film having suitable orientation. SOLUTION: This method for manufacturing the c-axis oriented ferroelectric thin film includes steps for preparing a substrate, depositing a layer of ferroelectric material by metal organic chemical vapor phase epitaxy (MOCVD) including a step for using a precursor solution having ferroelectric material concentration of about 0.1 M/L at a vaporizer temperature between about 140 deg.C to 200 deg.C, and annealing the substrate and the ferroelectric material at a temperature between 500 deg.C to 560 deg.C for between about 30 minutes to 120 minutes. |
