| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of determining the optical coefficient of a lower- layer antireflection film, and to provide a method of forming a resist pattern optimum for controlling variations in film thickens, even when the resist film is lower in transparency, with respect to short wavelength of 157 nm. SOLUTION: When an adequate exposure quantity due to variations in resist film thickness is expressed by the sum of a monotonously increasing term and a decaying oscillating term, the optical constants of the lower-layer antireflection film is selected in such a way that a local minimum value nearest to a local maximum point, on the increasing side of the film thickness than the local maximum point in the varying curve, is made almost equal to the local maximum point or no extremum point exists. |
