| 摘要 |
PROBLEM TO BE SOLVED: To prevent a conductive film from remaining on a gate electrode sidewall and to improve the production yield of a semiconductor device including a field-effect transistor where the source and drain regions are piled up with a conductive film. SOLUTION: A second conductive film 20 for forming the source region or the drain region of a plurality of field-effect transistors is formed while the same film is separated into a plurality of regions. Width W1 at the bottom section of the gate electrode side wall insulating film existing between two gate electrodes where the ratio D1/H between the D between the two gate electrodes and the height H of the gate electrode side wall insulating film is equal to or less than 2 is larger than the width W2 at the bottom section of the gate electrode side wall insulating film existing between the two gate electrodes where the ratio D/H is equal to or more than 3.
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