METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique which can form a crystalline semiconductor film having regular orientation and having reduced impurity concentration, by controlling crystal orientations. SOLUTION: In the method for manufacturing a semiconductor device, a first semiconductor region of amorphous semiconductor is formed on an insulating surface, a crystalline semiconductor having a (100) plane orientation rate of 70% or more is formed by scanningly directing a continuous oscillation laser beam from one end of a first semiconductor region toward the other end to once melt the first semiconductor region. Thereafter, the first semiconductor region is etched to form an active layer of a TFT and to form a second semiconductor region.