| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a tin/lead alloy bump for semiconductor package. SOLUTION: (a) Wires having the same components and diameters are selected in conformity with the size and the component of the necessary tin/lead alloy bump. (b) The wires are cut and made to be granules of desired bump weight. (c) The granules are dispersively supplied in high temperature liquid which reaches a softening point when the granules reach the upper layer of high temperature liquid. They are collected inside and are made into a sphere to be produced. The temperature gradually drops in the sinking process of the sphere. (d) The sphere whose temperature drops is formed at a room temperature. (e) The formed sphere is cleaned. (f) The cleaned sphere is screened by roundness and diameter tolerance. (g) A tin/lead alloy bump product is packaged, spherical specification sizes are matched, roundness and yield are improved, the surface of the sphere is made smooth, a scar is eliminated and oxidation resistance is given. |
