Memory device

摘要

A memory storage and retrieval device, comprising: (a) an electrically conductive first electrode; (b) an electrically conductive second electrode; and (c) a layer stack intermediate the first and second electrodes, comprising: (d) at least one active layer with variable electrical conductivity; and (e) at least one passive layer comprised of a source material for varying the electrical conductivity of the at least one active layer upon application of an electrical potential difference between the first and second electrodes.