发明名称 Column repair circuit in ferroelectric memory
摘要 A column repair circuit in a non-volatile ferroelectric memory having main columns and redundancy columns includes a data input/output buffer part for data input/output between the non-volatile ferroelectric memory and an external circuit, a failed column coding part for controlling the main columns and the redundancy columns and connected in response to a failed column address signal to one of main input/output lines in the input/output buffer part and redundancy input/output lines, a repair column adjusting circuit part connected to the failed column coding part for providing a redundancy mode control signal, a data bus amplifying part for amplifying data between the main input/output lines and the main columns to control read/write operation, and a redundancy data bus amplifying part for amplifying data between the redundancy input/output lines and the redundancy columns in response to the redundancy mode control signal.
申请公布号 US2003053328(A1) 申请公布日期 2003.03.20
申请号 US20020237205 申请日期 2002.09.09
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK JE HOON;KANG HEE BOK;KYE HUN WOO;KIM DUCK JU
分类号 G11C11/22;G11C29/00;G11C29/04;H01L21/8246;H01L27/10;H01L27/105;(IPC1-7):G11C11/22;G11C7/00;G11C5/00 主分类号 G11C11/22
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