| 摘要 |
PROBLEM TO BE SOLVED: To form an excellent connection hole on a laminated wire including a reflection-preventive film without making an etching time long. SOLUTION: A pattern 7 for conduction is formed of a polycrystalline silicon film (A), and a 1st inter-layer insulating film 11 and a 1st connection hole 13 are formed (B); and the laminated wire 19 is electrically connected to an impurity diffusion layer directly or through the pattern 7 for conduction (C), a 2nd inter-layer insulating film 21 is formed, and the 2nd inter-layer insulating film 21 and a reflection preventive film 17 are etched on a dry basis to form a 2nd connection hole 23 (D). The laminated wire 19 is electrically connected to the impurity diffusion layer 3 through the pattern 7 for conduction, so electric charges can be prevented from being accumulated in the laminated wire 19, and the etching can be prevented from being deterred owing to the accumulation of the electric charges. After a final protection film is formed, an opening part is formed in the insulating film on the pattern 7 for conduction, which is cut by being irradiated by a laser.
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