| 摘要 |
PROBLEM TO BE SOLVED: To provide an exchange coupling film, which is formed of an antiferromagnetic layer and a ferromagnetic layer, without change of thickness of the ferromagnetic layer and can change strength of exchange coupling magnetic field, and to also provide a method of manufacturing the same. SOLUTION: An exchange coupling film is formed by depositing on a substrate, the predetermined layer including on antiferromagnetic layer and a ferromagnetic layer by sputtering a target 303 using the ion beam 307 from an ion source 301 for film deposition. In this method, for the predetermined period among the time required for deposition of the antiferromagnetic layer, the surface forming the predetermined layer of the substrate 304 is irradiated with the ion beam 309 emitted from an assist ion source 302. The ion beam 309, used for irradiation can be obtained with acceleration by a voltage equal to 50 V or higher and equal to 125 V or lower. The layer in the predetermined thickness in the antiferromagnetic layer is the layer having the thickness of 1 nm or more but 50 nm or less.
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