发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a technique for preventing a reverse-side electrode from peeling out of a semiconductor device which has the reverse-side electrode. SOLUTION: The manufacturing method for the semiconductor device has a 1st process of forming circuit elements in a plurality of semiconductor chip areas sectioned by a dicing area on one main surface of a semiconductor wafer; a 2nd process of grinding the circuit element forming surface (top surface) of the semiconductor wafer and the opposite-side surface (reverse surface); a 3rd process of further flattening them after the 2nd process; a 4th process of forming the reverse-surface electrode after the 3rd process; and a 5th process of cutting the wafer into individual semiconductor chips by dicing, electrically connecting external electrodes and leads of the semiconductor chips, and sealing the semiconductor chips, leads, and electric connection parts with resin. After the 3rd process, the reverse surface of the semiconductor wafer is roughened into an uneven rough surface, and the reverse-surface electrode is formed on the roughened reverse surface of the semiconductor wafer through the 4th process.</p>
申请公布号 JP2003086787(A) 申请公布日期 2003.03.20
申请号 JP20010277940 申请日期 2001.09.13
申请人 HITACHI LTD 发明人 EBARA GEN;FUJII YUJI;SATO AKIHIKO;IHAYAZAKA TAKASHI
分类号 H01L21/28;H01L21/302;H01L21/3065;H01L21/336;H01L29/41;H01L29/78;(IPC1-7):H01L29/41;H01L21/306 主分类号 H01L21/28
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