发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device includes an NMOSFET and a PMOSFET. Each MOSFET includes first and second impurity diffusion layers for forming a source region and a drain region which are formed in a silicon layer of an SOI substrate or the like, a channel region formed between the first and second impurity diffusion layers, a gate insulation layer at least formed on the channel region, and a gate electrode formed on the gate insulation layer. The gate electrode includes a tantalum nitride layer in a region in contact with at least the gate insulation layer. The semiconductor device exhibits high current drive capability and can be manufactured at high yield.
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申请公布号 |
US2003052378(A1) |
申请公布日期 |
2003.03.20 |
申请号 |
US20010834992 |
申请日期 |
2001.04.12 |
申请人 |
OHMI TADAHIRO;SHIMADA HIROYUKI |
发明人 |
OHMI TADAHIRO;SHIMADA HIROYUKI |
分类号 |
H01L29/43;H01L21/28;H01L21/8238;H01L21/84;H01L27/08;H01L27/092;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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