| 摘要 |
<p>A compound semiconductor device discloses a substrate (10), active layers or compound semiconductor material layer (12, 14, 16) that are sequentially formed overt the substrate, an opening (20) in the layer (16), insulating layers (30) at side walls of the opening, a fourth compound semiconductor material (50) and reaction regions (74) within the opening, metal contacts (70) on the reaction region, and an insulating layer (80) and metal layer (72) on top of the layer (16).</p> |
