发明名称 STRIP LOADED WAVEGUIDE WITH LOW-INDEX TRANSITION LAYER
摘要 <p>A strip loaded waveguide (200) comprises a strip (210) and a slab (205), wherein the strip is separated from the slab. Nevertheless, a guiding region (225) is provided for propagating an optical mode and this guiding region extends both within the strip and the slab. A layer of material (215) having an index of refraction lower than that of the strip and the slab may be disposed between and separate the strip and the slab. In one embodiment, the slab comprises a crystalline silicon, the strip comprises polysilicon or crystalline silicon, and the layer of material therebetween comprises silicon dioxide. Such waveguides may be formed on the same substrate with transistors. These waveguides may also be electrically biased to alter the index of refraction and/or absorption of the waveguide.</p>
申请公布号 WO2003023468(A1) 申请公布日期 2003.03.20
申请号 US2002029028 申请日期 2002.09.10
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