发明名称 NITRIDE SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the exfoliation of an electrode containing Pd or Pt and the exfoliation of a dielectric film. SOLUTION: The exfoliation of the electrode can be prevented by being equipped with a GaNX contact layer containing one or more elements X selected from among As, P, or Sb in contact with an area to the electrode containing at least on of a nitride semiconductor layer, Pd, and Pt. Additionally, the exfoliation of the dielectric film can prevented by forming a dielectric film in contact with the GaNX contact layer.
申请公布号 JP2003086532(A) 申请公布日期 2003.03.20
申请号 JP20010277368 申请日期 2001.09.13
申请人 SHARP CORP 发明人 TSUDA YUZO
分类号 H01L21/28;H01L33/06;H01L33/32;H01L33/40;H01L33/44;H01S5/042;H01S5/323;H01S5/343 主分类号 H01L21/28
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