发明名称 APPARATUS AND METHOD FOR TREATING SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To provide an apparatus for treating a substrate capable of simultaneously treating end faces of upper and lower surfaces of the substrate. SOLUTION: The apparatus (1) for treating the substrate comprises a chucking surface (22) having an injection port for injecting first gas. The apparatus (1) treats the substrate by supplying treatment liquid from above the rotating substrate by the first gas injected from the port while the substrate is rotatably holding by floating the substrate from the chucking surface (22). The apparatus (1) comprises pressure-averaging means (32, 38 and 42) for averaging the pressure of the gas injected from the port, and an annular opening (52) provided to surround the port to inject second gas. In this apparatus, the opening (52) is opposed to an air gap (53) under a lower surface of the substrate in such a manner that its tangential direction is disposed to form an acute angle radially outward and downward of the substrate.</p>
申请公布号 JP2003086566(A) 申请公布日期 2003.03.20
申请号 JP20010271554 申请日期 2001.09.07
申请人 SUPURAUTO:KK 发明人 HARANO RIICHIRO;YOSHINO KIYOHIRO;WATARI TORU
分类号 H01L21/683;H01L21/304;H01L21/306;H01L21/68;(IPC1-7):H01L21/306 主分类号 H01L21/683
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