METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

PROBLEM TO BE SOLVED: To realize a TFT which can have high-level uniform transistor characteristics in applying to system-on-glass or the like and can be driven at a high speed with superior mobility especially in a peripheral circuit region. SOLUTION: An a-Si film 2 is patterned on a glass substrate 1 into lines (ribbon forms) (Fig. 1(a)) or into islands (Fig. 1(b)), the surface of the a-Si film 2 or the rear surface of the glass substrate 1 is irradiated and scanned in an arrowed direction with an energy beam emitted from a CW laser 3 timewise continuously to thereby crystallize the film 2.