发明名称 VACUUM PROCESSING SYSTEM
摘要 PROBLEM TO BE SOLVED: To obtain high-quality products by restraining a rise in temperature in a film forming chamber and eliminating negative effects of heat on the quality of products and on components in the film-forming chamber. SOLUTION: A heater cover 35 for supporting a substrate K to be subjected to film forming is provided in the opposite position of a ladder electrode 33 placed in a film forming chamber. The heater cover 35 is provided with a substrate heater 36 on its back. The substrate heater 36 is composed of several bar-shape cartridge heaters 44 in for heating the substrate K via the heater cover 35 in the process of treating the substrate K. The heater cover 35 is also provided with a cooling mechanism 61 on its back. The cooling mechanism 61 is ringed with cooling tubes 62 each of which has a rectangular section and through which cooling medium is made to flow.
申请公布号 JP2003086512(A) 申请公布日期 2003.03.20
申请号 JP20010272576 申请日期 2001.09.07
申请人 MITSUBISHI HEAVY IND LTD 发明人 SASAGAWA EISHIRO;UENO MOICHI;OTSUBO EIICHIRO;FUKAGAWA MASAYUKI
分类号 C23C16/44;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;H01L31/04;(IPC1-7):H01L21/205;H01L21/306 主分类号 C23C16/44
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