发明名称 |
VACUUM PROCESSING SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To obtain high-quality products by restraining a rise in temperature in a film forming chamber and eliminating negative effects of heat on the quality of products and on components in the film-forming chamber. SOLUTION: A heater cover 35 for supporting a substrate K to be subjected to film forming is provided in the opposite position of a ladder electrode 33 placed in a film forming chamber. The heater cover 35 is provided with a substrate heater 36 on its back. The substrate heater 36 is composed of several bar-shape cartridge heaters 44 in for heating the substrate K via the heater cover 35 in the process of treating the substrate K. The heater cover 35 is also provided with a cooling mechanism 61 on its back. The cooling mechanism 61 is ringed with cooling tubes 62 each of which has a rectangular section and through which cooling medium is made to flow.
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申请公布号 |
JP2003086512(A) |
申请公布日期 |
2003.03.20 |
申请号 |
JP20010272576 |
申请日期 |
2001.09.07 |
申请人 |
MITSUBISHI HEAVY IND LTD |
发明人 |
SASAGAWA EISHIRO;UENO MOICHI;OTSUBO EIICHIRO;FUKAGAWA MASAYUKI |
分类号 |
C23C16/44;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;H01L31/04;(IPC1-7):H01L21/205;H01L21/306 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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