| 摘要 |
PROBLEM TO BE SOLVED: To provide an internal voltage generator for peripheral circuits of a bank, and a semiconductor memory device and a voltage generating method provided the generator. SOLUTION: A control section generates a control signal responding to a bank activation command enabling a memory bank and a bank activation signal. An internal voltage generating circuit receives a reference signal, and outputs internal voltage of the same level as the reference voltage responding to the control signal. The control signal is enabled when the bank activation command and the bank activation signal are enabled simultaneously. Also, the bank activation signal is generated responding to an bank address. By this constitution, as internal voltage is supplied to only peripheral circuits of a bank selected by a bank address, needless power consumption can be prevented, also, as magnitude of internal voltage can be adjusted, appropriate internal voltage can be supplied always.
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