| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory preventing occurrence of an unwanted leak current. SOLUTION: A write-driver/read-amplifier circuit WRn comprises a write- driver 240, a GIO equalizing circuit 250, and a read-amplifier circuit 260. When a leak current is caused in a global data line GIOn or/GIOn, a signal IOSHD inputted to logic gates R42 and R43 is made a L level. Consequently, transistors in inverters IV45, IV46, and the GIO equalizing circuit 250 are tuned off.
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