发明名称 METHOD FOR FORMING PROTECTIVE FILM OF SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To solve the problem that a baking temperature is raised when the protective film of a semiconductor element is formed of lead system glass. SOLUTION: A mixture obtained by mixing aqueous ammonia to the water solution of the organic polymer matter having a carboxyl group is applied to the inclined side face 10 of a semiconductor substrate 1 composed of an n<+> -type semiconductor region 7, an n-type semiconductor region 8 and a p-type semiconductor region 9, and baking processing is conducted to form the protection film 6 having negative electric charge.
申请公布号 JP2003086582(A) 申请公布日期 2003.03.20
申请号 JP20010276107 申请日期 2001.09.12
申请人 SANKEN ELECTRIC CO LTD 发明人 ONISHI HIDETO
分类号 H01L21/331;H01L21/312;H01L21/329;H01L29/73;(IPC1-7):H01L21/312 主分类号 H01L21/331
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