| 摘要 |
Disclosed is a system and method for forming a current-perpendicular-to-plane (CPP) spin-valve sensor with one or more metallic oxide barrier layers in order to provide a low junction resistance and a high GMR coefficient. In disclosed embodiments, the metallic oxide barrier layers are formed with oxygen-doping/in-situ oxidation processes comprising depositing a metallic film in a first mixture of argon and oxygen gases and subsequent in-situ oxidization in a second mixture of argon and oxygen gases. The exposure to oxygen may be conducted at a low partial oxygen pressure and at a moderate temperature. Smaller, more sensitive CPP spin-valve sensors may be formed through the use of the oxygen-doping/in-situ oxidization processes of the present invention, thus allowing for greater densities of disk drive systems.
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