发明名称 Treatment and evaluation of a substrate processing chamber
摘要 A substrate processing apparatus has a chamber having a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and an exhaust to exhaust the gas. A detector is adapted to detect a first intensity of a first wavelength of a radiation emission from an energized gas in the chamber and generate a first signal in relation to the first intensity and to detect a second intensity of a second wavelength of the radiation emission and generate a second signal in relation to the second intensity. A controller receives the first and second signals from the detector, performs a mathematical operation on the first and second signals to determine a value related to a condition of the chamber, and treats the chamber in relation to the value by providing instructions to operate one or more of the substrate transport, substrate support, gas supply, gas energizer and gas exhaust.
申请公布号 US2003052083(A1) 申请公布日期 2003.03.20
申请号 US20010859039 申请日期 2001.05.14
申请人 KIM NAM-HUN;CHU CHONG HWAN 发明人 KIM NAM-HUN;CHU CHONG HWAN
分类号 C23C16/44;C23C16/52;H01J37/32;H01L21/00;(IPC1-7):C23F1/00;G01R31/00 主分类号 C23C16/44
代理机构 代理人
主权项
地址