| 摘要 |
A semiconductor memory device is provided, which prevents electrical short-circuit between the conductor lines (e.g., the bit lines) and the contact pads for electrically connecting the lower capacitor electrodes. The first conductive pads are formed to fill the respective contact holes of the first interlayer dielectric film in such a way that the tops of the first pads are lower than the surface of the first interlayer dielectric film. Thus, the gaps are formed on the tops of the first pads in the respective contact holes. The wiring (or conductive) lines, the top faces and side faces of which are covered with the dielectric, are formed on the surface of the first interlayer dielectric film. The wiring lines of the first group are electrically connected to the first conductive pads. The wiring lines of the second group are apart from the respective first conductive pads, thereby electrically insulating the wiring lines of the second group from the first conductive pads.
|
