GaN-BASED SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a GaN semiconductor device which has small ON resistance and can be driven with a large current. SOLUTION: The GaN-based semiconductor device has a transistor structure B formed of a GaN-based material on one surface of a transparent insulating substrate 1, and a light emitting diode structure C formed of a GaN-based material on the other surface of the insulating substrate 1.