发明名称 Thin film transistor array panel
摘要 Disclosed is a simplified manufacturing method for liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on an insulating substrate. Next, a gate insulating layer covering the gate wire, a semiconductor layer, an ohmic contact layer, and a data conductive layer are sequentially deposited, and a photoresist pattern is formed on the data conductive layer. Following this step, the data conductive layer, using the photoresist pattern as an etch mask, is etched to form a data wire including a data line, a source electrode, a drain electrode, and a data pad. Next, the photoresist pattern is reflowed to cover the portion between the source electrode and the drain electrode, and a portion of the ohmic contact layer adjacent to a periphery of the data wire. Subsequently, portions of the ohmic contact layer and the semiconductor layer, which are not covered by the photoresist pattern, are etched, and the photoresist pattern is removed. Next, a portion of the ohmic contact layer, which is not covered by the data wire, is etched to expose a portion of the semiconductor layer between the source electrode and the drain electrode that is a channel portion of a thin film transistor. Finally, a protection layer, a pixel electrode, a redundant gate pad and a redundant data pad are formed.
申请公布号 US2003053006(A1) 申请公布日期 2003.03.20
申请号 US20020280055 申请日期 2002.10.25
申请人 BAEK BUM-KEE;KONG HYANG-SHIK;KIM DAI-MOE 发明人 BAEK BUM-KEE;KONG HYANG-SHIK;KIM DAI-MOE
分类号 G09F9/30;G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):G02F1/136 主分类号 G09F9/30
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