| 摘要 |
PROBLEM TO BE SOLVED: To provide at an inexpensive semiconductor storage having a large capacity. SOLUTION: In a memory cell MC included in a memory circuit 3 of a system LSI, the gate electrode 43 of an N-channel MOS transistor Q and the cell plate electrode 48 of a capacitor C are formed out of a single wiring layer. Therefore, since the system LSI can be created only in CMOS logic processes, the system LSI including the memory circuit 3 having a relatively large capacity can be created at a low cost. |
