| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which is made small-sized by high integration. SOLUTION: The manufacturing method has a process of forming a 1st insulating layer 8 on a substrate where at least three adjacent contacts 5, 6, and 7 are formed, a process of forming an opening part at a specific position of the 1st insulating layer, a process of forming an Si-based conductive layer 10 on the 1st insulating layer and opening part, a process of forming a 2nd insulating layer 11 on the Si-based conductive layer, a process of etching only the Si-based conductive layer by anisotropic etching, a process of forming a silicide layer 15 on the etched Si-based conductive layer and forming Bit wires on the contacts respectively, a process of burying the 1st insulating layer and silicide layer in the 2nd insulating layer and 3rd insulating layer 16, and a process of forming a contact hole 19 by etching the 3rd insulating layer between adjacent Bit wires. |
