| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for detecting the defect of a susceptor in which the defect of an SiC film covering the surface of the susceptor can be detected easily and surely when it cannot be found by conventional visual inspection and thereby an Si wafer can be produced efficiently with high yield without causing any damage to the characteristics. SOLUTION: On the surface of a susceptor body 1 coated with an SiC film 2, the mirror finished surface M of a dummy wafer 4a is mounted tightly and heated, and then C is caused to intrude into the mirror finished surface M. Subsequently, it is further heated in oxidizing atmosphere thus gasifying and separating C. The presence of a pinhole P1 or a defective part P2 in the susceptor body 1 is confirmed by checking a C atom intruding part P11, P12 in the dummy wafer 4a.</p> |
