| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a large-capacity solid electrolytic capacitor with excellent high-frequency characteristics, which can be connected directly to a semiconductor component. SOLUTION: One surface is made porous by etching, a resist film 4 is formed at a porous part 3 of aluminum foil 2, a through-hole 5 is formed at a prescribed position of the aluminum foil 2, and an insulating film 6 is formed on the other surface, which is not made porous of the aluminum foil 2 and an inner wall of the through-hole 5. Then, after removing the resist film 4, a dielectric film 7 is formed at the porous part 3, a solid electrolytic layer 8 is formed on the dielectric film 7, and then a through-hole electrode 9 is formed inside the through-hole 5. Then, after forming a collector layer 10 on the solid electrolytic layer 8, an opening part 11 is formed at a prescribed position of the insulating film 6 on the other surface of the aluminum foil 2, and a connection terminal 12 is formed at the opening part 11 of the insulating film 6 and on the exposed surface of the through-hole electrode 9. |
