| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that a crystal defect is likely generated since the semiconductor layer of a diode chip is formed by epitaxial growth in a conventional diode bridge, that a device for carrying out the epitaxial growth is expensive, and that it is difficult to miniaturize the device since man-hours and costs for assembling two diode chips into one package are increased. SOLUTION: A p<+> type semiconductor layer 3a is formed by thermal diffusion at one side half of the surface side of an n<-> type semiconductor substrate 1, and simultaneously a p<+> type semiconductor layer 3b is formed by thermal diffusion at the other half opposite to one side of the surface side at the back side, and a groove 2 is formed so that two diodes forming pn junction can be formed in one chip with its inside and outside in reverse. Thus, it is possible to reduce man-hours and costs for assembling those two diode chips into one package, and to miniaturize this device.
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