| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for treating the peripheral edge of a substrate capable of suppressing metal contamination of an end face of the substrate. SOLUTION: The apparatus for treating the peripheral edge of the substrate comprises an etching nozzle 21, a pure water nozzle 22 and a gas nozzle 23 disposed above the peripheral edge of a wafer W which is held by a vacuum chuck 10. The nozzles 21, 22 and 23 are rotatably moved by a turning drive mechanism 27. Thus, an etchant supply position P1 can be changed within a non-device forming region of the peripheral edge of the wafer W. Further, a pure water supply position P2 can be changed within the non-device forming region of the peripheral edge of the wafer W from a device-forming region in the wafer W.
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