发明名称 |
Sputtering apparatus for forming a metal film using a magnetic field |
摘要 |
A sputtering apparatus includes a sputtering chamber, a target disposed in the sputtering chamber, and a magnetic field generator for generating a rotating magnetic field at the front of the target. The magnetic field generator includes a main magnetic field-generating part that faces the back of the target and is horizontally (laterally) offset from a vertical line passing through the center of the target. A magnetic annule of the main magnetic field-generating part forms a magnetic enclosure having openings therethrough at locations faced in the directions of the central and peripheral portions of the target. The magnetic field-generating part thus produces a magnetic field having a non-uniform distribution at the front of the target. A substrate is positioned within the sputtering chamber facing the front of the target. A metal layer is formed by sputtering atoms from the front of the target onto the substrate. The behavior of the sputtered atoms can be effectively controlled by the magnetic field.
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申请公布号 |
US2003052001(A1) |
申请公布日期 |
2003.03.20 |
申请号 |
US20020106220 |
申请日期 |
2002.03.27 |
申请人 |
PARK YOUNG-KYOU;UM HYEON-ILL;SHIN JAI-KWANG;KIM SEONG-GU |
发明人 |
PARK YOUNG-KYOU;UM HYEON-ILL;SHIN JAI-KWANG;KIM SEONG-GU |
分类号 |
C23C14/35;H01J37/34;(IPC1-7):C23C14/35 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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