SURFACE MODIFYING LAYERS FOR ORGANIC THIN FILM TRANSISTORS

摘要

Provided is an organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The monolayer precursor composition has the formula: X-Y-Zn, wherein X is H or CH3; Y is a linear or branched C5-C50 aliphatic or cyclic aliphatic connecting group, or C8-C50 group comprising an aromatic group and a C3-C44 aliphatic or cyclic aliphatic connecting group; Z is selected from from -PO3H2, -OPO3H2, benzotriazolyl (-C6H4N3), carbonyloxybenzotriazole (-OC(=O)C6H4N3), oxybenzotriazole (-O-C6H4N3), aminobenzotriazole (-NH-C6H4N3), -CONHOH, -COOH, -OH, -SH, -COSH, -COSeH, -C5H4N, -SeH, -SO3H, -NC, -SiCl(CH3)2, -SiCl2CH3, amino, and phosphinyl; and n is 1, 2, or 3 provided that n = 1 when Z is -SiCl(CH3)2 or -SiCl2CH3. Methods of making a thin film transistor and an integrated circuit comprising thin film transistors are also provided.