发明名称 Verfahren und Vorrichtung zum Prüfen von Halbleiterspeichereinrichtungen
摘要 The invention relates to a test method for testing, on a testing device (PA), semiconductor devices (P) that have a bi-directional data strobe link for a data strobe signal (DQS) whereby the data strobe signal is tested by transferring data between the semiconductor memory device (P) to be tested and a second semiconductor memory device of the same type (R). The invention also relates to a device for carrying out the inventive method.
申请公布号 DE10140986(A1) 申请公布日期 2003.03.20
申请号 DE20011040986 申请日期 2001.08.21
申请人 INFINEON TECHNOLOGIES AG 发明人 CORDES, ERIC;STOCKEN, CHRISTIAN;EGGERS, GEORG;LUEPKE, JENS
分类号 G01R31/28;G11C7/10;G11C11/401;G11C29/50;G11C29/56;(IPC1-7):G11C29/00 主分类号 G01R31/28
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