| 摘要 |
PURPOSE: A memory cell is provided to make an arrangement of high density by including the first tunnel junction and the second tunnel junction connected in series with the first tunnel junction. CONSTITUTION: The first tunnel junction in a selected memory cell is blown to program the selected memory cell. Blowing the first tunnel junction creates a short across the first tunnel junction and changes the resistance of the selected memory cell(130) from the first state to the second state. The change in resistance is detectable by a read process. The second tunnel junction has a different anti-fuse characteristic than the first tunnel junction and is not shorted by a write process. The second tunnel junction can provide an isolation junction to the memory cell after the first tunnel junction is blown.
|
