发明名称
摘要 PURPOSE: A method for eliminating a photoresist layer is provided to save fabricating cost and to prevent plasma damage to a lower layer under resist, by using conventional equipment for a mask process and developer. CONSTITUTION: The lower layer(11) is formed on a substrate(10). The resist(12) is applied on the lower layer. The resist is exposed to plasma. The resist exposed to the plasma is exposed to developer and eliminated so that the lower layer is exposed. A cleaning process is performed regarding the substrate. A transparent substrate is used as the substrate, and a chrome layer is used as the lower layer.
申请公布号 KR100376869(B1) 申请公布日期 2003.03.19
申请号 KR20000066155 申请日期 2000.11.08
申请人 发明人
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址
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