| 摘要 |
PROBLEM TO BE SOLVED: To provide an antireflection film for lithography having a high antireflection effect, free of intermixing with a photoresist layer, giving an excellent photoresist pattern, having a higher dry etching rate than the photoresist and ensuring a larger margin for the depth of a focus and higher resolution than a conventional antireflection film. SOLUTION: In a method for forming an antireflection film as a layer under a photoresist using an antireflection film forming material comprising a resin, a crosslinker and a solvent, an antireflection film whose surface energy has been adjusted according to the magnitude of the surface energy of the coating photoresist is formed. |
