发明名称 SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a sputtering apparatus for generating the magnetic field on the front side of a target when depositing a metal layer. SOLUTION: A substrate 34 is disposed facing the front side of the target 32 in a sputtering chamber 30. Sputtering particles to be sputtered from the front side of the target 32 are deposited on the substrate 34 to deposit the metal layer on the substrate 34. A magnetic field generation unit 40 faces a back side of the target 32, and has an enclosure mode having an open part on a part deviated from a center part of the target 32. The magnetic field generation unit 40 provides the magnetic field having the non-uniform distribution on the front side of the target 32. The behavior of the sputtering particles can be efficiently controlled by using the magnetic field having the non-uniform distribution. Thus, a uniform target corrosion profile can be obtained.
申请公布号 JP2003082460(A) 申请公布日期 2003.03.19
申请号 JP20020203800 申请日期 2002.07.12
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 PARK YOUNG-KYOU;GEN KENITSU;SHIN JAI-KWANG;KIM SEONG-GU
分类号 C23C14/35;H01J37/34;(IPC1-7):C23C14/35 主分类号 C23C14/35
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