发明名称 |
Thermoelectric material and method of manufacturing the same |
摘要 |
A thermoelectric material having large thermoelectric figure of merit is provided. A thin film comprising nanometer-sized particles having their diameters distributing within the range of 0.5 nm though 100 nm both inclusive is formed by depositing the nanometer-sized particles on a substrate, or dispersing the particles in a solid matrix material or solution thereby to form a thin film. In the thin film, a band gap due to quantum confinement effect is generated in each of the particles and electrical conduction occurs by that at least a part of the particles supply carriers. Accordingly, thermal conductivity kappa as well as electrical resistivity rho and Seebeck coefficient S all of which are factors of thermoelectric figure of merit can be independently controlled, and it is possible to get a thermoelectric material having large dimensionless thermoelectric figure of merit ZT such as beyond 1.5. <IMAGE> |
申请公布号 |
EP1187230(A3) |
申请公布日期 |
2003.03.19 |
申请号 |
EP20010121085 |
申请日期 |
2001.09.03 |
申请人 |
JAPAN AVIATION ELECTRONICS INDUSTRY, LIMITED |
发明人 |
SUZUKI, AKIKO;KATAOKA, IZUMI |
分类号 |
C23C14/28;H01L21/203;H01L35/14;H01L35/16;H01L35/18;H01L35/34 |
主分类号 |
C23C14/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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