| 摘要 |
PURPOSE: To provide a halftone phase shifting mask capable of accurate patterning. CONSTITUTION: The halftone phase shifting mask 20 hag a transparent substrate 21 and a light shielding film 22 and halftone films 23 each formed directly on the substrate 21. The halftone films 23 are formed on the substrate 21 in first openings 24 formed in the light shielding film 22 and have second openings 25 in the first openings 24. Since both the first and second openings 24, 25 can be formed by dry etching, the openings 24, 25 have enhanced dimensional accuracy and the dimensional accuracy of a semiconductor device produced by utilizing the phase shifting mask 20 is enhanced. |
