METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING THE SAME

摘要

PURPOSE: A method for forming a contact hole of a semiconductor device and a method for fabricating a semiconductor device by using the same are provided to reduce parasitic capacitance by minimizing a bridge between a wire and a contact hole. CONSTITUTION: A plurality of the first patterns(56) including the first conductive layer pattern(52) and the first insulating layer pattern(54) are formed on a semiconductor substrate(50). A plurality of spacers(58) are formed on each sidewall of thee first patterns(56). A conductive plug(60) is formed by filling a conductive material between the first patterns. The first blocking layer is formed on a surface of the conductive plug(60) and surfaces of the first patterns. The second insulating layer(64) is formed on the first blocking layer. A contact hole(68) is formed by etching the second insulating layer(64) and the first blocking layer.