SINGLE CRYSTAL GAN SUBSTRATE, METHOD OF GROWING SAME AND METHOD OF PRODUCING SAME

摘要

Seeds are implanted in a regular pattern upon an undersubstrate. A GaN cryst al is grown on the seed implanted undersubstrate by a facet growth method. The fac et growth makes facet pits above the seeds. The facets assemble dislocations to the pi t bottoms from neighboring regions and make closed defect accumulating regions (H) under th e facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies a re forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extr a low dislocation single crystal regions (Y) are low dislocation density single crystals.