SINGLE CRYSTAL GAN SUBSTRATE, METHOD OF GROWING SAME AND METHOD OF PRODUCING SAME,申请号CA20022543950-传众专利搜索

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发明名称	SINGLE CRYSTAL GAN SUBSTRATE, METHOD OF GROWING SAME AND METHOD OF PRODUCING SAME
摘要
申请公布号	CA2543950(A1)	申请公布日期	2003.03.19
申请号	CA20022543950	申请日期	2002.09.13
申请人	SUMITOMO ELECTRIC INDUSTRIES, LTD.	发明人	UEMATSU, KOJI;HIROTA, RYU;MOTOKI, KENSAKU;OKAHISA, TAKUJI;NAKAHATA, SEIJI
分类号	C30B25/02;C30B25/18;C30B29/40;H01L21/20;H01L29/04;H01L29/20;H01L33/00	主分类号	C30B25/02
代理机构		代理人
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