| 摘要 |
PURPOSE: Ruthenium complexes which can be subjected to the film-formation by the CVD method at a low temperature compared with the complexes as described above and can suitably supply a precursor thereof, a process for producing the same and a process for producing a ruthenium-containing thin film are provided. CONSTITUTION: The half-sandwich organometallic ruthenium compound is characterized in that it is represented by the following general formula 1, wherein R1, R2, R3 and R4 are the same or different and each represents hydrogen, a halogen atom, a lower acyl group, a lower alkoxy group, a lower alkoxycarbonyl group or a lower alkyl group, provided that the case where R1 to R4 are all hydrogen, and the case where R1 is hydrogen, one of R2 to R4 is hydrogen, and the remainder are methyl groups are excluded. The carbonyl bis(diene) ruthenium complex is characterized in that it is represented by the following general formula 7, wherein R5 to R8 represent each hydrogen, an alkyl group, or an alkyl group containing an alkoxy group, an alkoxycarbonyl group, an alkanoyl group, a hydroxyl group, a carbonyl group, a halogen atom, a carboxyl group, an amino group or a carbamoyl group, and the unsubstituted alkyl group and the substituted alkyl group each has 1 to 6 carbon atoms, provided that the case where R5 to R8 are all hydrogen, and the case where R5 and R8 are hydrogen and R6 and R7 are methyl are excluded.
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