发明名称 POSITIVE RESIST COMPOSITION
摘要 PURPOSE: Provided is a positive resist composition which can be suitably used in ultra-micro lithographic processes for production of VLSI(very large scale integrated circuit) and high-capacity microchips and in other photofabrication processes. CONSTITUTION: The positive resist composition comprises (A) a resin capable of increasing the solubility in an alkali developer by the action of acid, in which the resin contains (A1) a repeating unit having at least one of a dihydroxy adamantyl group and a trihydroxy adamantyl group and (A2) a repeating unit containing an acid-decomposable group having an alicyclic structure; and (B) a compound capable of generating an acid upon irradiation with one of an actinic ray and radiation, wherein the resin (A) contains the repeating unit(A1) and the repeating unit(A2) in a composition molar ratio A1/A2 of from 0.15 to 1.0, and a total content of the repeating unit(A1) and the repeating unit(A2) in the resin(A) is 40 to 70 mole %.
申请公布号 KR20030023446(A) 申请公布日期 2003.03.19
申请号 KR20020032948 申请日期 2002.06.12
申请人 FUJI PHOTO FILM CO., LTD. 发明人 SATO KENICHIRO
分类号 G03F7/004;G03F7/039;(IPC1-7):G03F7/039 主分类号 G03F7/004
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